Gallium Arsenide (GaAs)

Gallium Arsenide Atomic Numbers

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Gallium Arsenide Wafers in stock

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  • Below are just some of the wother GaAs wafers that we have in stock. Diameter from less than 1" to 6". Buy as few as one wafer!
  • GaAs (100), N type Te doped, 10x10 x 0.35 mm, SSP
  • GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, SSP
  • GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
  • GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, DSP
  • GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, SSP
  • GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.35mm, DSP
  • GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, SSP, (5.17-6.72) x 10^17 /cm^3
  • GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, SSP
  • GaAs Si doped, N type, SSP, 2" dia x 0.5mm wafer
  • GaAs (100) orientation, SI (semi-insulating), undoped 10x10x 0.5mm, SSP,
  • GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, DSP,cc: (1.07-1.90) x 10^18 /cm^3
  • GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, DSP
  • GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, DSP
  • GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2" dia x 0.35mm, DSP
  • GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, DSP,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
  • GaAs , Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, DSP,Carrier Concentration: (1.4-3.96) x 10^18 /cm^3
  • GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, SSP
  • GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, DSP
  • GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, SSP
  • GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, SSP
  • GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, DSP, Mechanical Grade
  • GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, DSP, Mechanical Grade
  • GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x (0.5-0.625) mm, DSP, Mechanical Grade
  • GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, DSP

GaAs Wafer Sale Items

We have the following GaAs substrates from leading manufacturer AXT. Act now! At these prices the wafers won't last!

GaAs Specs/Pricing

axt gallium arsenide wafer gaas

Conduct Type: S-C-N
Dopant: 2" GaAs Te Doped
Orientation: (100) 2 deg off toward [101]+/-0.5 deg
Primary Flat" (0-1-1)+/-1 deg
Secondary Flat: (101)+/-2 deg
Carrier Concentration: (0.1-0.2)E18
Resistivity: (7.4-10.)E-3
Mobility: 3600-3700
Etch Pit Density (EPD):  8,000
Laser Marking: NONE
Thickness: 485+/-25um
Surface: SSP

Qty Price

100 $29.90 each
25 $35.90 each
10 $39.90 each
5 $45.90 each
1 $59.90

Gallium Arsenide Solar Cell

We work with some of the larges Gallium Wafer supplier to Gallium Arsenide Solar Cellbring researchers low cost high quality substrates for:

  • Gallium Arsenide Solar Cells
  • Gallium Arsenide LED
  • Microwave Frequency Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Infrared Light-Emitting Diodes
  • Laser Diodes
  • Optical Windows
Gallium Arsenide Electronics Materials Devices Gallium Arsenide Technology
gaas materials safety data sheets

Gallium Arsenide MSDS available upon request!